| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor photo-electric cathode capable of increasing quantum efficiency by forming a semiconductor optical absorption layer with high crystallinity. SOLUTION: This semiconductor photo-electric cathode has a semiconductor optical absorption layer 3 formed on a buffer layer 2 on a substrate 1 and for converting incident light into an electron; and an alkali metal-containing layer 5 formed on the semiconductor optical absorption layer 3 and for emitting the electron into vacuum. The buffer layer 2 has first and second amorphous semiconductor layers 2a, 2c and a single crystal semiconductor layer 2b locating between the first and the second amorphous semiconductor layers 2a, 2c. Since the buffer layer 2 has such constitution, the crystallinity of the semiconductor optical absorption layer 3 formed on the buffer layer 2 is improved, the life of an electron existing in the semiconductor optical absorption layer 3 is lengthened, and quantum efficiency is enhanced.</p> |
