| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the reduction of insulation breakdown voltage due to damage of dielectric film or forming a thinner film in a highly integrated MIM capacitor, by insulating a gap between a second electrode and the surface exposing over the dielectric film in its periphery in the end of the second electrode. SOLUTION: A second electrode 11 is formed by etching, and it is oxidized from its side wall by using an SiO2 film formed thereon as a mask so as to form an oxidization area 7. Thus, a gap between the second electrode 11 to be given a voltage and the surface of damaged dielectric film 3 is insulated, so that a leakage current can be prevented in an end 6 and the reduction of insulation breakdown voltage associated with the generation of damage area be also prevented. Therefore, the side wall of the second electrode 11 is oxidized to form an insulation film, thereby insulating a gap between the second electrode 11 and the surface exposing over the dielectric film and preventing the reduction of insulation breakdown voltage in the end part of the second electrode. As a result, the reliability even in a highly integrated thin-film MIM capacitor can be improved.</p> |
