| 摘要 |
PROBLEM TO BE SOLVED: To attain a high etching rate without using halogen gases, such as chlorine in using plasma etching. SOLUTION: Plasma is generated in a vacuum vessel 1 by supplying a gas from a gas inlet 14 into the vacuum vessel 1 while evacuating the gas from the vacuum vessel 1 with a vacuum pump 11. When the etching object of a substrate 7 which is mounted on an electrode 6 in the vacuum vessel 1 is etched, a mixed gas containing oxygen gas and carbon or containing hydrogen atoms and carbon atoms is supplied. Thereby, etching objects such as ruthenium, ruthenium oxide, iridium, iridium oxide, rhenium, rhenium oxide, rhodium or rhodium oxide are etched at a high etching rate.
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