| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which exhibits a buffer breakdown voltage higher than that of a conventional device. SOLUTION: A field effect transistor of compound semiconductor is provided with a buffer layer formed on a substrate. At least one of elements, such as oxygen (O), nitrogen (N) or boron (B) is added two-dimensionally or at least one of elements coupled to carbon (C) such as O, N, or B is two-dimensionally added. These materials have the effect of making the Si inert, by coupling to Si which is a residual impurity of the substrate in an interface between a substrate 101 and a buffer layer 103.
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