| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor element, wherein a semiconductor substrate is laid in a raw material gas atmosphere to deposit a product originating from the raw material gas on the semiconductor substrate surface, thereby forming a thin film on the substrate surface whereby it is possible to suppress the contamination of the semiconductor element with dust produced in the raw material gas atmosphere or byproducts deposited to a reactor chamber or pipings, and to improve the product yield and throughput. SOLUTION: In this semiconductor element manufacturing method in which a semiconductor substrate 3 is laid in a raw material gas atmosphere to deposit a product originating from the raw material gas on the semiconductor substrate 3 surface, thereby forming a thin film on the semiconductor substrate 3 surface, a gas capable of suppressing the adherence of byproducts which are produced with particles or in the raw material gas atmosphere to the apparatus walls is fed in a reaction system 2 to remove the byproducts produced in the atmosphere.
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