| 摘要 |
PROBLEM TO BE SOLVED: To uniformly epitaxially grow an Si layer at low temps. by epitaxially growing a polysilicon or amorphous Si layer or Si of a low-m.t. metal layer with seeds of steps to precipitate a single crystal Si layer by the cooling treatment. SOLUTION: On one main surface of a quartz glass substrate 1 a photoresist 2 is formed in a specified pattern, e.g. and irradiated with F+ ions 3 of a CF4 plasma with this resist 2 used as a mask to form a plurality of steps 4 on the substrate 1 by the reactive ion etching(RIE), then the photo resist is removed, a polysilicon film 5 is deposited on the entire surface including the steps 4, and the polysilicon film 5 is dissolved in a melt of the metal In 6 and gradually cooled to epitaxially grow the Si dissolved in the metal In with the steps used as seeds, thus precipitating a single crystal Si layer 7.
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