发明名称 FUNCTIONAL DESCRIPTION GENERATION METHOD FOR SEMICONDUCTOR CIRCUIT, AND STORAGE MEDIUM HAVING RECORDED THE METHOD THEREON
摘要 PROBLEM TO BE SOLVED: To provide a functional description generation method for semiconductor circuit capable of automatically generating high-order functional description data from low-order functional description data and to provide a storage medium in which the method has been stored. SOLUTION: This method includes a terminal name extracting means 11 to extract a terminal name and its attribute from functional description data for every specified function unit, an input/output attribute judging means 12 to judge attributes in both directions of input and output by a merge processing for the functional description data in which plural attributes of the extracted terminal name exist, and a functional description generating means 13 to generate the same external terminal as the terminal name and to output the upper functional description data so that the same terminal for every function unit is connected by the same network.
申请公布号 JP2000020561(A) 申请公布日期 2000.01.21
申请号 JP19980182335 申请日期 1998.06.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKANO NOBUYOSHI
分类号 G06F17/50;(IPC1-7):G06F17/50 主分类号 G06F17/50
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