发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To prevent an instantaneous light damage without decreasing a light emitting efficiency and without introducing a complexity, by forming an insulating film for stopping a flow of a current at a position corresponding to an end of an optical waveguide between an electrode and an upper clad layer. SOLUTION: When a voltage is applied to a lower electrode 14 and an upper electrode 28, a current is given from the electrode 28 to an active layer 18 through a second contact layer 26, a first contact layer 32, a second upper clad layer 30, an etching stop layer 22 and a first clad layer 20, and an optical waveguide 18a generates a laser beam. At this time, since a current directed toward an end of the waveguide 18a is stopped by an insulating layer 34, a current non-current injection region 18b is formed at the end of the waveguide 18a. Accordingly, no Joule heat is generated at the end of the waveguide 18a, a contraction of a band gap due to a temperature rise is suppressed, and an absorption of the beam is suppressed. Thus, since the temperature rise of the end of the waveguide 18a can be suppressed, an instantaneous light damage can be prevented.
申请公布号 JP2000022262(A) 申请公布日期 2000.01.21
申请号 JP19980181791 申请日期 1998.06.29
申请人 ROHM CO LTD 发明人 TANABE TETSUHIRO
分类号 H01S5/00;H01S5/02;H01S5/223;(IPC1-7):H01S5/30 主分类号 H01S5/00
代理机构 代理人
主权项
地址