| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a polycrystalline silicon film, which can improve long term reliability of a gate oxide film by reducing the interface roughness between a gate oxide film and the polycrystalline silicon film. SOLUTION: In the forming method of a polycrystalline silicon film, a polycrystalline silicon film is formed, and interface roughness between an oxide film and the polycrystalline silicon film is set to be under 1 nm with a film forming condition that the film forming speed of the polycrystalline silicon film on all the substrates is set to 0.9 rav-1.1 rav, when the average film forming speed, of the polycrystalline silicon film onto a plurality of substrates where the oxide films are formed on surfaces, is set to be rav (nm/min).
|
