Vertikales Halbleiterbauelement mit reduziertem elektrischem Oberflächenfeld

摘要

The invention relates to a vertical semiconductor element comprising a semiconductor body (1, 2) of a first conductivity type, whereby at least one zone (4) of another opposite conductivity type is embedded in the surface of said semiconductor body, in addition to areas (8) of another conductivity type that are provided in the semiconductor body (1, 2) on a plane running substantially parallel to the surface of the surface area. The areas (8) are highly doped so that they cannot be cleared when voltage is applied to the charge carriers.