| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the steps between a dummy pattern and an active region by forming a buried oxide film pattern for dummy in advance at a groove formation region for separating elements and forming the groove for separating elements. SOLUTION: A silicon nitride film 6 is formed on the entire surface of a semiconductor substrate 1, and a resist pattern 71 for dummy and a resist pattern 72 for forming element reparation regions are formed on a groove TR1 and an active region AC, respectively, on the silicon nitride film 6. With those resist patterns 71 and 72 as a mask, the silicon nitride film 6 is etched and a nitride film pattern 62 for forming element separation grooves and a dummy nitride film pattern 62 are formed. Then, with the nitride film pattern 62 as a mask, the semiconductor substrate 1 is etched, a groove TR2 for separating elements is formed, and at the same time a CVD oxide film 5 buried into the groove TR1 is allowed to remain in the groove T2 as a dummy pattern.
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