发明名称 Verfahren zum Einstellen der Magnetisierung der Biasschicht eines magneto-resistiven Sensorelements, demgemäß bearbeitetes Sensorelement oder Sensorelementsystem sowie zur Durchführung des Verfahrens geeignetes Sensorelement und Sensorsubstrat
摘要 The invention relates to a method for regulating the magnetization of at least one bias layer of a magnetoresistive sensor element, whereby the bias layer is part of an AAF (artificial antiferromagnetic) system consisting of at least one bias layer, at least one flux conducting layer and at least one connecting layer that is arranged between said layers and connects them antiferromagnetically. The inventive method comprises the following steps: a) the sensor element is heated to above a predetermined temperature (Ts) or cooled to below a predetermined temperature (Ts), b) a magnetic regulating field (Hein) is applied during and/or after heating or cooling, c) the regulating field (Hein) is no longer applied after a predetermined time period, and d) the temperature is brought back to the initial temperature.
申请公布号 DE19830344(A1) 申请公布日期 2000.01.20
申请号 DE19981030344 申请日期 1998.07.07
申请人 SIEMENS AG 发明人 VAN DEN BERG, HUGO;MATTHEIS, ROLAND
分类号 H01F13/00;G01B7/30;G01R33/09;H01L43/12;(IPC1-7):H01L43/12;H01L43/08 主分类号 H01F13/00
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