| 摘要 |
<p>A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward the substrate for processing. A diverter (228) is positioned between the generation chamber (202) and the substrate (224). A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter (230) is placed between the substrate and the exhaust system (206) to increase the residence time of reactive species adjacent to the backside.</p> |
