| 摘要 |
FIELD: growth of single crystals by pulling them from melt, particularly, with growth regulation by weight variation of single crystals; applicable in commercial synthesis of oxide single crystals. SUBSTANCE: device for embodiment of the method has inductor 1 accommodating crucible 2 with melt. Inductor 1 is connected via current transformer 3 with thyristor generator 4. Growing single crystal 5 is connected with weighing cell 6 whose signal arrives at multiplexor 7. Fed to multiplexor 7 are signals from cooling water temperature-sensitive element 8, crucible temperature-sensitive element 9 and current transformer 3. Output of multiplexor 7 is connected via A/D converter 10 to control computer 11. The latter produces control signal which is fed via D/A converter 12 to thyristor generator 4 which changes its power and consequently temperature of crucible 2. Directly upon each measurement of weight of single crystal 5, array of 70-300 last measurements are supplied from control computer 11 to the second computer 13 where spectral analysis of fed array is effected under conditions of real time with the help of Fourier conversion. In so doing, presence in signal of harmonic oscillations is detected, and obtained information is supplied to control computer 11 where fine tuning of coefficients of proportional integral-differential regulator is accomplished. Proportional integral-differential regulator is component part of control computer 11. EFFECT: higher quality of single crystal due to reduced periodic variations of single crystal diameter. 5 cl, 3 dwg, 1 tbl
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