| 摘要 |
<p>A maskless photolithography system for use in photolithography of a desired mask pattern on a photo resist coated subject includes a light source (32) for projecting a collimated beam of light, a first lens system (34), and a pattern generator (38). Upon receipt of the prescribed mask pattern information, the pattern generator (38) generates a resident mask pattern therein to be imaged upon the photo resist coated subject. A mask pattern design system is provided for outputting the prescribed mask pattern information corresponding to the desired mask pattern to the pattern generator (38). The maskless photolithography system further includes a second lens system (40) and a subject stage (44). The subject stage (44) is provided for receiving the subject thereon during a photolithographic exposure, wherein light from the light source (32) is directed through the first lens system (34), from the first lens system (34) to the pattern generator (38) and emanating from the pattern generator (38) with the desired mask pattern, into the second lens system (40), and lastly onto the photo resist coated subject.</p> |
