发明名称 Method of fabricating an electronic device on a silicon on insulator wafer
摘要 A high-frequency wireless communication system on a single ultrathin silicon on sapphire chip is presented. This system incorporates analog, digital (logic and memory) and high radio frequency circuits on a single ultrathin silicon on sapphire chip. The devices are fabricated using conventional bulk silicon CMOS processing techniques. Advantages include single chip architecture, superior high frequency performance, low power consumption and cost effective fabrication.
申请公布号 EP0708980(B1) 申请公布日期 2000.01.19
申请号 EP19940920168 申请日期 1994.06.10
申请人 PEREGRINE SEMICONDUCTOR CORPORATION 发明人 REEDY, RONALD, E.;BURGENER, MARK, L.
分类号 H01L21/02;H01L21/20;H01L21/336;H01L21/762;H01L21/86;H01L27/11;H01L27/12;H01L29/786;H04Q9/00 主分类号 H01L21/02
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