发明名称 |
p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A p-type semiconductor composed basically of an Ib-IIIb-Vib2 group compound semiconductor (especially CuInS2) which is improved in carrier concentration and has advantages in manufacture and performance. In order to obtain the p-type semiconductor mentioned above, p-type CuInS2 is formed by adding both P (p-type impurity) and Sn (n-type impurity) to CuInS2 . The carrier concentration of the p-type semiconductor is 5 x 10<17> cm<-3> which is larger than the value (5 x 10<16> cm<-3> ) obtained when P and In are added or anotherr value (3x 10<15> cm<-3> ) obtained when only P is added. A thin film solar cell characterized by a glass substrate (2), an Mo electrode (1), a p-type semiconductor layer (3), an n-type semiconductor layer composed of a CdS layer (4), and an ITO electrode (5) is manufactured by using the CuInS2 layer containing P and Sn as the p-type semiconductor (3). It is confirmed that the conversion efficiency of the solar battery is as high as 12%. <IMAGE></p> |
申请公布号 |
EP0955680(A4) |
申请公布日期 |
2000.01.19 |
申请号 |
EP19970935784 |
申请日期 |
1997.08.14 |
申请人 |
ASAHI KASEI KOGYO KABUSHIKI KAISHA |
发明人 |
WATANABE, TAKAYUKI;YAMAMOTO, TETSUYA;YOSHIDA, HIROSHI |
分类号 |
C30B29/46;H01L31/032;H01L31/0336;H01L31/04;H01L33/28;H01L33/32;H01L33/42;(IPC1-7):H01L31/04;H01L33/00;H01L29/24 |
主分类号 |
C30B29/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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