| 摘要 |
<p>Non-volatile semiconductor memory device comprising an address buffer block (10), a matrix of memory cells (11) and an output buffer block (12), said address buffer block (10) receiving input signals (8) external to the memory device, that in a first operating mode are controlled by devices outside to the memory device, and transmitting signals to said matrix of memory cells (11), adapted to decode said received signals and to transmit in turn output decoded signals through said output buffer block (12). A command block (13;17,18,19) is provided with, activatable through an external control signal (16) that, once activated, puts the memory device in a second operating mode in which said command block (13;17,18,19) receives at least a part of said signals in output of said matrix of memory cells (11) and, after having processed them, transmits internal address signals (15) to said address buffer block (10), so to have a feedback inside said memory device capable of making the same able to execute a succession of instructions memorized in said matrix of memory cells (11) autonomously. <IMAGE></p> |
