发明名称 |
Multiple data rate synchronous DRAM for enhancing data transfer speed |
摘要 |
The present invention relates to a multiple data rate memory device which has broadened the concept of a double data rate SDRAM. The multiple data rate memory device includes clock signal generator means for receiving an external clock of a frequency f and outputting a plurality of clocks, a frequecy multi-doubler for logically operating the plurality of clocks and outputting an internal clock of a frequency 2Nf (N is natural number); an odd data input buffer for receiving tha data at the rising edge of the internal clock; and an even data input buffer for receiving tha data at the falling edge of the internal clock.
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申请公布号 |
US6016283(A) |
申请公布日期 |
2000.01.18 |
申请号 |
US19980222229 |
申请日期 |
1998.12.29 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JEONG, YONG GWON |
分类号 |
G11C11/407;G11C7/10;G11C7/22;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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