发明名称 Multiple data rate synchronous DRAM for enhancing data transfer speed
摘要 The present invention relates to a multiple data rate memory device which has broadened the concept of a double data rate SDRAM. The multiple data rate memory device includes clock signal generator means for receiving an external clock of a frequency f and outputting a plurality of clocks, a frequecy multi-doubler for logically operating the plurality of clocks and outputting an internal clock of a frequency 2Nf (N is natural number); an odd data input buffer for receiving tha data at the rising edge of the internal clock; and an even data input buffer for receiving tha data at the falling edge of the internal clock.
申请公布号 US6016283(A) 申请公布日期 2000.01.18
申请号 US19980222229 申请日期 1998.12.29
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 JEONG, YONG GWON
分类号 G11C11/407;G11C7/10;G11C7/22;(IPC1-7):G11C8/00 主分类号 G11C11/407
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