| 摘要 |
A bitline mask pattern having reduced optical proximity effect for use in manufacturing a semiconductor memory device is disclosed. The bitline mask pattern comprises: a plurality of bitlines having a plurality of contact pads that are equally spaced apart. The bitlines are arranged parallel to each other in a columnar array and such that alternate bitlines have their contact pads aligned with each other. The contact pads having a rectangular shape, but at each corner of the contact pad, rectangular corner portions removed, and at opposing sides of the contact pads, rectangular side portions are removed.
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