| 发明名称 |
Process improvements for titanium-tungsten etching in the presence of electroplated C4's |
| 摘要 |
A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium EDTA, and it reduces or eliminates the incidence of etch-resistant metal without damaging the protected metal.
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| 申请公布号 |
US6015505(A) |
申请公布日期 |
2000.01.18 |
| 申请号 |
US19970960839 |
申请日期 |
1997.10.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DAVID, LAWRENCE D.;FANTI, LISA A. |
| 分类号 |
C23F1/26;H01L21/306;H01L21/308;H01L21/3213;H01L21/60;(IPC1-7):H01L21/00 |
主分类号 |
C23F1/26 |
| 代理机构 |
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