发明名称 PRODUCTION OF PIEZOELECTRIC SINGLE CRYSTAL
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for producing a piezoelectric single crystal having an excellent electromechanical coupling coefficient by preventing the change of a composition. SOLUTION: A solid body of lead oxide, and a sintered body 5 of a raw material for a piezoelectric single crystal are separately stored in a crucible 1, and the caliber [(r) mm] of the crucible 1 and the height [(h) mm] of a molten liquid are regulated so as to satisfy the formulas 3<=(h)<=200 and 0.03 <=(h)/(r)<=10 when the molten liquid 4 is formed by melting the solid body of the lead oxide, when producing the piezoelectric single crystal 3 consisting of a perovskite type complex oxide by forming a local temperature gradient by a heater 6 to heat the crucible 1, and moving the crucible 1 to provide the piezoelectric single crystal 3 consisting of the perovskite type complex oxide.</p>
申请公布号 JP2000016900(A) 申请公布日期 2000.01.18
申请号 JP19980199588 申请日期 1998.06.30
申请人 TOSHIBA CORP 发明人 SHIMANUKI SENJI;HARADA KOICHI;YAMASHITA YOHACHI;KOBAYASHI TAKASHI;SAITO SHIRO;IZUMI MAMORU
分类号 C30B11/00;C30B29/22;H01L41/09;H01L41/187;H01L41/333;H01L41/39;H01L41/41;(IPC1-7):C30B29/22;H01L41/24 主分类号 C30B11/00
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