GAS DEPOSITION METHOD AND ITS APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a gas deposition method which is capable of stably evaporating a metallic material of a high m. p. and active metallic material and is capable of stably forming superfine particle films having high purity and uniformity for a long time and an apparatus therefor. SOLUTION: A gaseous He circulating circuit is formed by a superfine particle forming chamber 21, transporting pipe 31 and film forming chamber 41 positioned on a perpendicular line and a gas purifying and circulating device 51. An arc discharge is induced between a water cooled copper hearth 15 as an anode loaded with a hemispherical Ti-Ni alloy 17 and a tungsten chip 19 as a cathode held on a negative electrode holder 18 right thereabove to locally heat and evaporate the front end of the Ti-Ni alloy 17 in the superfine particle forming chamber 21. The formed superfine particles are ejected from a nozzle 32 through the transporting pipe 32 to form the superfine particle film on the substrate 42 in the film forming chamber 41.