| 摘要 |
Method for fabricating an inductor on a semiconductor substrate including a cell region in a semiconductor device is disclosed, including the steps of forming impurity diffusion regions having a predetermined diffusion depth and spaced away from one another by a predetermined distance beneath surface of a semiconductor substrate; selectively oxidizing the semiconductor substrate in a direction crossing the impurity diffusion regions to form an inductor core layer; and forming a polysilicon layer on the entire surface including the inductor core layer and selectively patterning the polysilicon layer to form a plurality of polysilicon pattern layers each connecting with one of ends of the impurity diffusion regions with an opposite end of the adjacent impurity diffusion region so as to form an inductor coil layer electronically connecting the impurity diffusion regions.
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