发明名称 |
Plasma CVD method |
摘要 |
In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.
|
申请公布号 |
US6015762(A) |
申请公布日期 |
2000.01.18 |
申请号 |
US19960748233 |
申请日期 |
1996.11.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;SAKAMA, MITSUNORI;HIROKI, MASAAKI |
分类号 |
C23C16/50;C23C16/40;H01L21/205;H01L21/285;H01L21/31;H01L21/316;H01L29/786;(IPC1-7):H01L21/02 |
主分类号 |
C23C16/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|