Method of stripping a wafer of its film with gas injected into a CVD apparatus in which the wafer is disposed

摘要

A method for stripping a film from a wafer substrate includes the steps of inserting a boat holding the wafer into a processing chamber of a CVD apparatus, and injecting gas into the chamber, to thereby strip the wafer of its film. A typical film requiring stripping is a polysilicon film grown on an underlying oxide layer of the substrate. In this case, CIF3 is used to strip the polysilicon film without damaging the oxide layer. Accordingly, this method is applicable to the quality testing of semiconductor wafer films using a test wafer. In such quality testing a film is formed on a test wafer substrate at the same time the semiconductor wafer film is formed. The film of the test wafer is tested to evaluate the quality of the formation of the semiconductor wafer film. The test wafer can then be stripped within the chemical vapor deposition apparatus and thus can be reused soon thereafter.