发明名称 |
Method of manufacturing a semiconductor memory device |
摘要 |
The first element separation oxide film consisting of a plurality of line-shaped portions parallel to the bit line is formed on the surface of the P-type silicon substrate. The first and second trenches are formed in that portion of the P-type silicon substrate which is located between an adjacent pair of line-shaped portions of the first element separation oxide film such that both sides of the trenches come in contact with the first element separation oxide film. A sheath plate capacitor is formed in each of the trenches. The second element separation oxide film having a thickness less than that of the first element separation oxide film is formed on that portion of the surface of the P-type silicon substrate which is located between the first and second trenches.
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申请公布号 |
US6015731(A) |
申请公布日期 |
2000.01.18 |
申请号 |
US19970923735 |
申请日期 |
1997.09.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOHYAMA, YUSUKE;SUDO, AKIRA |
分类号 |
H01L21/76;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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