发明名称 Metal layered semiconductor laser
摘要 By using fusion of a heat spreader layer, a large bandwidth, high power semiconductor laser can be fabricated. The use of multiple metals with low thermal resistance allows for higher power because heat flow is conducted away from the active region easily. The extraction of heat from the active region makes the resultant laser more stable with the capability for higher power outputs.
申请公布号 US6015980(A) 申请公布日期 2000.01.18
申请号 US19970828372 申请日期 1997.03.28
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 BOWERS, JOHN E.;TAUBER, DANIEL ABRAHAM
分类号 H01L21/331;H01L31/18;(IPC1-7):H01L33/00 主分类号 H01L21/331
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