发明名称 High-precision analog reading circuit for flash analog memory arrays using negative feedback
摘要 An analog reading circuit having a current mirror circuit forcing two identical currents into a cell to be read and into a reference cell. An operational amplifier has an inverting input connected to the drain terminal of the cell to be read, a non-inverting input connected to the drain terminal of the reference cell, and an output connected to the gate terminal of the reference cell. The reference cell therefore forms part of a negative feedback loop which maintains the overdrive voltages of the cell to be read and the reference cell constant, irrespective of temperature variations. The reading circuit is also of high precision and has a high reading speed.
申请公布号 US6016272(A) 申请公布日期 2000.01.18
申请号 US19980060165 申请日期 1998.04.14
申请人 STMICROELECTRONICSS. R. L. 发明人 GERNA, DANILO;CANEGALLO, ROBERTO;CHIOFFI, ERNESTINA;PASOTTI, MARCO;ROLANDI, PIER LUIGI
分类号 G11C16/28;G11C27/00;(IPC1-7):G11C16/06 主分类号 G11C16/28
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