Microwave-activated etching of dielectric layers

摘要

A microwave-activated plasma process for etching dielectric layers (20) on a substrate (25) with excellent control of the shape and cross-sectional profile of the etched features (40), high etch rates, and good etching uniformity, is described. A process gas comprising (i) fluorocarbon gas (preferably CF4), (ii) inorganic fluorinated gas (preferably NF3), and (iii) oxygen, is used. The process gas is introduced into a plasma zone (55) remote from a process zone (60) and microwaves are coupled into the plasma zone (55) to form a microwave-activated plasma. The microwave-activated plasma is introduced into the process zone (60) to etch the dielectric layer (20) on the substrate (25) with excellent control of the shape of the etched features.