发明名称 DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To make it possible to prevent the interference with a plasma generating source and the arc discharge with a metallic surface and to stably execute the destaticization of an object for deposition by radiating electrons from an electron supply source to the surface part of the object for deposition after plasma assisted CVD deposition and further arranging a discharge closure casing. SOLUTION: The destaticization of the object 3 for deposition after the plasma assisted CVD deposition is executed by radiating the electrons from the electron supply source 1 to its surface part electrified to a plus potential. The discharge closure casing 2 enclosing the electron radiation region in front of the electron supply source 1 is arranged to confine the discharge. The discharge closure casing 2 is provided with a spacing regulation plate 4 at the open front end edge arranged along a tape traveling path and is further provided with turn-back plates 5 covering both side parts of the object 3 for dispersion over the rear surface side slidingly contactably with the casing 2 to surely prevent the leakage of the electrons. The rear wall part 2a of the casing 2 is formed as an openable and closable cap and the inside wall surface is made attachable and detachable. The electron supply source 1 is set on a high output side and the inside of the casing 2 is connected to a grounding potential.
申请公布号 JP2000017441(A) 申请公布日期 2000.01.18
申请号 JP19980187773 申请日期 1998.07.02
申请人 SONY CORP 发明人 NISHIYAMA HIDETOSHI;KIN YASUNORI;ABE ATSUHIRO
分类号 C23C16/50;C23C16/56;(IPC1-7):C23C16/50 主分类号 C23C16/50
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