发明名称 |
Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon and a hemispherical grain polysilicon layer produced according to the method |
摘要 |
A semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon over a substrate includes, a) providing a layer of conductively doped silicon over the substrate to a thickness greater than about 200 Angstroms; b) depositing an undoped layer of non-polycrystalline silicon over the doped silicon layer to a thickness of from 100 Angstroms to about 400 Angstroms; c) positioning the substrate with the doped silicon and undoped non-polycrystalline silicon layers within a chemical vapor deposition reactor; d) with the substrate therein, lowering pressure within the chemical vapor deposition reactor to a first pressure at or below about 200 mTorr; e) with the substrate therein, raising pressure within the chemical vapor deposition reactor from the first pressure and flushing the reactor with a purging gas; f) with the substrate therein ceasing flow of the purging gas and lowering pressure within the chemical vapor deposition reactor to a second pressure at or below about 200 mTorr; and g) annealing the substrate having the deposited non-polycrystalline silicon layer in the presence of a conductivity enhancing impurity gas at an annealing temperature of from about 350 DEG C. to about 600 DEG C. and at an annealing pressure of from about 10-4 Torr to about 80 Torr to in situ both diffuse conductivity enhancing impurity into the non-polycrystalline silicon layer and transform the non-polycrystalline silicon layer into a conductively doped hemispherical grain polysilicon layer.
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申请公布号 |
US6015743(A) |
申请公布日期 |
2000.01.18 |
申请号 |
US19980064631 |
申请日期 |
1998.04.22 |
申请人 |
ZAHURAK, JOHN K.;SCHUEGRAF, KLAUS F.;THAKUR, RANDHIR P.S. |
发明人 |
ZAHURAK, JOHN K.;SCHUEGRAF, KLAUS F.;THAKUR, RANDHIR P.S. |
分类号 |
H01L21/02;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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