METHOD OF FORMING CHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method is for increasing capacitance of a capacitor and for improving the characteristics and the reliability of a semiconductor device. CONSTITUTION: The method makes the patterning of a thick polycrystalline silicon layer(15) easy by etching the polycrystalline silicon layer using a silicon oxide film(17) as a mask when using a thick polycrystalline silicon layer to increase the surface area of a charge storage electrode.