FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabricating method of a semiconductor device is provided to decrease processes and to improve a characteristic of electric current by a parasitic active transistor by forming an elevated isolation film of an element separation and by forming a gate electrode at the same time. CONSTITUTION: A method fabricating a semiconductor element comprises a process of; forming an exposure film pattern(17) by an espousing and developing process using an element isolation mask in the upper side of a semiconductor substrate(11); forming a polymer spacer(15) in the etching side of an electric conduction layer; removing the polymer spacer and the exposure film pattern(17); forming a corner made on the side wall of a trench and on the surface of the semiconductor substrate in a circle; ion-pouring impurities on the semiconductor substrate by the electric conduction layer as a mask; forming an even CVD isolation film recovering the trench; forming a tungsten silicide in the upper part of the semiconductor substrate; forming the elevated isolation film of the element separation and the gate electrode by etching the tungsten silicide and the electric conduction layer.