| 摘要 |
PURPOSE: A row address strobe path control method for use in an integrated circuit memory devices is provided to prevent the row address strobe signal interference with a word line boosting signal falling. CONSTITUTION: The method includes controlling a word line boosting signal using a first RAS(row address strobe) signal from a RAS buffer, delaying a feedback signal of the first RAS signal, producing a second RAS signal by performing a logical operation of the delayed signal and the first RAS signal, and controlling a row address signal in response to the second RAS signal, thereby preventing the row address strobe signal interference upon a word line boosting signal falling and reducing the intersignal overlap which can occur when wordlines of a memory device are charged and discharged.
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