MOSFET MANUFACTURING METHOD HAVING POLYCIDE GATE

摘要

PURPOSE: A MOSFET manufacturing method is provided to easily inject the LDD ion by preventing an abnormal oxidized film from generating on the side wall of a polycide gate applying a titanium silicide. CONSTITUTION: The MOSFET manufacturing method having the polycide gate that applies titanium silicide, has the steps of: sequentially layering a polysilicon film(3) and a titanium(4) on a gate insulating film; rapidly heating for forming a titanium silicide film(5) in a nitric atmosphere; and removing the titanium nitric film that is additionally generated on the titanium silicide film.