POLYSILICON FILM TRANSISTOR PRODUCTION METHOD

摘要

PURPOSE: A polysilicon film transistor production method is provided to eliminate dehydrogenation process. CONSTITUTION: The polysilicon TFT is produced in the process of; forming a buffer layer(12) on a insulated substrate(10), forming the 1st non-crystalline silicon layer(14) employing PECVD method and forming the 2nd non-crystalline silicon layer(16) by the sputtering method; forming a polysilicon layer(18) on the buffer layer(12) by crystallizing the 1st and the 2nd non-crystalline layers(14,16)