POLYSILICON-THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A polysilicon-thin film transistor and the manufacturing method at a liquid crystal display device are provided to prevent electric current from leaking when turning off and to increase an electric field moving extent. CONSTITUTION: The polysilicon-thin film transistor comprises: a substrate(11); a first gate(12) formed on the specific part of the substrate; a channel layer made into polysilicon and formed on the upper substrate and the upper oxide film of the surface of the first gate; a gate insulating film(16) and a second gate(17) formed on the specific part of the channel layer; and a source, drain area formed on the channel layer of both sides of the second gate.