METHOD OF MANUFACTURING A THIN FILM TRANSISTOR

摘要

PURPOSE: A method of manufacturing a thin film transistor(TFT) is provided which has a channel layer have a uniform crystal structure by eliminating a step difference caused by a gate electrode. CONSTITUTION: A method of manufacturing a thin film transistor(TFT) comprises the steps of: evaporating a metal layer for a gate electrode; forming a mask pattern only for the gate electrode; forming the gate electrode by patterning the metal layer by using the mask pattern; forming an insulation layer for planarization on both sides of the gate electrode to the same height of the gate electrode while not eliminating the mask pattern, and planarizing the entire surface; eliminating the mask pattern; forming a gate insulation layer on the insulation layer for planarization and the gate electrode; and forming a channel layer on the gate insulation layer.