METHOD FOR FORMING CONNECT WIRE OF C-METAL OXIDE SEMICONDUCTOR TRANSISTOR USING POLY-SILICON FILM

摘要

PURPOSE: A method for forming a connect wire of a C-Metal Oxide Semiconductor(CMOS) transistor using a poly-silicon film is provided to prevent impurities from diffusing from an impurity area forming a drain of each transistor to the connect wire. CONSTITUTION: A method for forming a connecting wiring of a CMOS transistor comprises: a first step forming an NMOS transistor and a PMOS transistor on a semiconductor substrate; a second step forming an interlayer insulating film on the whole structure and selectively eliminating the interlayer insulating film for forming a contact hole; a third step forming an impurity diffusion preventing film in the contact hole; and a fourth step forming a poly-silicon film connecting wiring for connecting the drain areas of the NMOS transistor and the PMOS transistor.