SEMICONDUCTOR DEVICE AND METHOD THEREOF

摘要

PURPOSE: A semiconductor device and method thereof are provided to decrease a resistance of a gate by forming the gate having multi-layer. CONSTITUTION: The method comprises the steps of: forming a first insulating layer(32a) by thermal oxidation and a first conductive layer(33); forming a trench by selective etching the first conductive layer(33); forming a second conductive layer(35) and an HLD(High temperature Low Deposition) layer(36a) on the first conductive layer; forming a cap gate insulator(36) by selective etching the HLD layer(36a); and forming multi-layer gate(38) by selective etching the second conductive layer(35), the first conductive layer(33) and the first insulating layer(32a) using the cap gate insulator(36).