METHOD OF FORMING CAPACITOR HAVING BOTTOM ELECTRODE OF DOUBLE FILM STRUCTURE OF IRIDIUM FILM AND PLATINUM FILM

摘要

PURPOSE: The method improves the characteristics of preventing the oxygen diffusion and prevents the increase of leakage current. CONSTITUTION: The method is to form a capacitor preventing the diffusion of oxygen and the increase of leakage current in the process of depositing a dielectric film(29) in the high temperature oxygen atmosphere on a bottom electrode, by forming the bottom electrode of a capacitor having the dielectric film formed in the high temperature oxygen atmosphere such as (Ba, Sr)TiO3 in the double film structure of an Ir film(27) and a Pt film(28, 31).