PROCESS FOR DEPOSITING HIGHLY DOPED POLYSILICON LAYER ON STEPPED SURFACE OF SEMICONDUCTOR WAFER RESULTING IN ENHANCED STEP COVERAGE,申请号KR19910012097-传众专利搜索

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发明名称	PROCESS FOR DEPOSITING HIGHLY DOPED POLYSILICON LAYER ON STEPPED SURFACE OF SEMICONDUCTOR WAFER RESULTING IN ENHANCED STEP COVERAGE
摘要
申请公布号	KR100239283(B1)	申请公布日期	2000.01.15
申请号	KR19910012097	申请日期	1991.07.16
申请人	APPLIED MATERIALS INC.	发明人	SIRAEL, BEINGLASS
分类号	H01L21/205;H01L21/02;H01L21/225;H01L21/3205;(IPC1-7):H01L21/20	主分类号	H01L21/205
代理机构		代理人
主权项
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