| 发明名称 |
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE |
| 摘要 |
The properties of a diffusion barrier material layer (48) over a semiconductor substrate (10) are enhanced in a simple and time-effective manner by immersing the substrate (10) in an oxidizing liquid. For a titanium-tungsten barrier metal (48), a dip in nitric acid for 1-60 minutes provides the metal with an oxide layer (50) of the right thickness of 10-20 ANGSTROM . <IMAGE> |
| 申请公布号 |
KR100238564(B1) |
申请公布日期 |
2000.01.15 |
| 申请号 |
KR19920007072 |
申请日期 |
1992.04.25 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
SHELDON C.P.LIM;STANLEY C.CHU |
| 分类号 |
H01L21/28;H01L21/283;H01L21/3205;H01L21/60;H01L21/768;H01L23/52;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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