METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR USING HEMISPHERICAL GRAIN SILICON LAYER

摘要

PURPOSE: A method is to form a capacitor by using a hemispherical grain silicon layer to improve the characteristics of a memory cell. CONSTITUTION: A method is to form a hemispherical grain silicon layer(19) having grains of different size on the surface of a bottom electrode pattern(18) by forming the bottom electrode pattern comprising a crystalline layer(15) and an amorphous layer on a semiconductor substrate. The method minimizes the reduction of the surface area of the bottom electrode and prevents neighboring bottom electrodes from being connected.