| 摘要 |
1319079 Semi-conductor devices RCA CORPORATION 14 Aug 1970 [18 Aug 1969] 39299/70 Heading H1K A method of forming a semi-conductor device from a single crystal of silicon comprises forming a flat surface orientated in the (110) plane, and etching the surface along a (111) plane extending perpendicularly to the surface. A body 34 may be etched along a set of parallel planes to pro - duce a plurality of grooves 38 with sidewalls aligned in (111) planes. In another embodiment a pattern of diamond-shaped islands may be formed on the surface of the body, the grooves between the islands having walls parallel to two intersecting sets of {111} planes, both sets being perpendicular to the surface. The grooves may be filled with insulating material and devices formed in the islands. A feed-through array may be formed from the previous structure by covering the islands and grooves with insulating material, grinding down the body until the islands are isolated, and grinding the insulating material down to the tops of the islands, each island forming a separate conductor. Alternatively diamond-shaped recesses may be formed in a body, the walls being parallel to intersecting {111} planes. Masking materials may be of silicon dioxide, silicon nitride or silicon carbide, insulating materials of glass or plastics material. Etchants include aqueous solutions of potassium or sodium hydroxide. |
