| 摘要 |
1,126,846. Electric solid-state devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 13 April, 1967 [13 April, 1966], No. 17092/67. Heading H1K. A force-sensitive electric device consists of a body, of semi-conductor or insulating material having a forbidden energy gap, doped with multiple level impurities including at least one deep level impurity whose effect is to promote the recombination of electron-hole pairs. Such a body exhibits negative resistance at a threshold voltage whose value is a function of the mechanical loading on the body. Fig. 1 shows a body of semi-conductor in which a region 12 has been doped in the required manner, the mechanical loading on this region being variable by means of a pressure member 15. The body 11 may be phosphorus doped silicon and the region 12 formed by further doping with copper. This is surmounted by a gold-antimony alloyed electrode 13. Gold in addition to copper may be diffused into the region 12 before attachment of this electrode. A second electrode 14 is connected to the body 11 and may be either ohmic or rectifying-nickel is specified as a suitable material. An alternative device (not shown) consists of a film of phosphorus doped silicon dioxide sandwiched between aluminium plates. The doped SiO 2 is deposited from a CO 2 atmosphere containing vaporous halides of silicon and phosphorus. After deposition the film is further doped with gold. |
