PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A production method for a semiconductor device is provided to improve the reliability and the yield rate of the device by preventing the oxidation of a wiring included a polysilicon at a process of the following inter-layer insulation film. CONSTITUTION: The production method for a semiconductor device comprises step of: disposing an IPO(InterPoly Oxide) after forming a bit line(21) of a polysilicon on a silicon substrate(20); disposing a polysilicon film(23) on the upper part; disposing a BPSG(BoroPospho Silicate Glass) film(24) in the upper part of the whole structure; flowing the BPSG film(24) by operating a heat process; changing the polysilicon film(23) to a SiO2 film(26).