FORMING OF DEVICE PARTITION FILM OF SEMICONDUNTOR DEVICE

摘要

PURPOSE: A forming method of a device partition film of a semiconductor device is provided to prevent the generation of the bird's beak on the section of the device partition film when the device partition film is formed by a Local Oxidation of Silicon. CONSTITUTION: A forming method of a device partition film of a semiconductor device comprises the steps of: forming a pad oxide(21) on a silicon substrate(20); forming the first antioxidant pattern(22a) on the pad oxide; forming the pad antioxidant pattern(21) on the bottom of the first antioxidant pattern by etching the pad oxide; and forming antioxide on the whole structure completed by the third step, forming the second antioxidant pattern on the side of the pad oxide pattern by etching the antioxide.