CAPACITOR PRODUCTION METHOD FOR SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A capacitor production method for a semiconductor memory device is provided to prevent a bridge among storage electrodes and the pollution of semiconductor substrates by particles of HSG film. CONSTITUTION: The capacitor for a semiconductor memory device is produced in the process of; forming an insulation layer(104) on the semiconductor substrate(100); etching the insulation layer(104) until the surface of the semiconductor substrate(100) is exposed and forming a contact hole(105); forming a conductive film(106) on the insulation layer(104); forming a photoresist pattern(108) on the conductive film(106) to form a storage electrode.